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M.Hanke, T.Boeck, A.-K.Gerlitzke, F.Syrowatka, F.Heyroth, R.K?hler
Size, shape and ordering of LPE-SiGe/Si(001) islands grown under far non-equilibrium growth conditions
Appl. Phys. Lett. 86 (2005), 142101

Applying scanning electron microscopy we have studied the evolution of shape and lateral positional correlation of SiGe/Si(001) Stranski-Krastanow islands grown by means of liquid phase epitaxy (LPE). However, in contrast to conventional near equilibrium LPE a distinctly higher cooling rate of 10K/min ensures extremly non-equilibrium growth conditions. The facet inclination of subsequent island stages decreases from nearly vertical side walls toward {111}- and {101}-type facets. Energy dispersive x-ray microanalysis yields a size independent germanium content of 8.9% within islands between 760nm and 1700nm base width which is - by more than a factor of two - smaller than islands of same concentration grown in a near equilibrium LPE process. Square-like formations of subsequently smaller islands around a large central island indicate only next to island interactions during the lateral self-assembling.

Keywords: liquid phase epitaxy, SiGe/Si

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