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H. S. Leipner, H. Lei
Diffusion-drift-aggregation model of the interaction of point defects and dislocations in semiconductors
phys. stat. sol. (c) 2 (6) (2005), 1859-1863

The interaction of sulfur with dislocations in GaAs has been studiedby Raman, cathodoluminescence, and transmission electron microscopy. The carrier concnetration increases at dislocations in a region extending uo to 10 ?m. At the same time the dislocations are decorated with As precipitates, The findings can be explained by a diffusion-drift-aggregation model describing the various processes of point defects at dislocations. ? 2005 Wiley-VCH Weinheim

Keywords: dislocations, point defects, vacancies, model, interaction, cathodoluminescence, Raman, transmission electron microscopy, precipitates, gallium arsenide, decoration
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