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Maurizio Roczen, Enno Malguth, Martin Schade, Andreas Schöpke, Abdelazize Laades, Michael Blech, Orman Gref, Thomas Barthel, Jan Amaru Töfflinger, Manfred Schmidt, Hartmut S. Leipner, Lars Korte, Bernd Rech
Comparison of growth methods for Si/SiO2 nanostructures as nanodot heteroemitters for photovoltaic application.
J. Non-Cryst. Sol. 358 (2011), 2253-2256

Two different growth mechanisms are compared for the fabrication of Si/SiO2 nanostructures on crystalline silicon (c-Si) to be used as hetero-emitter in high-efficiency solar cells: (1) The decomposition of substoichiometric amorphous SiOx (a-SiOx) films with 0 < x < 1.3 and (2) the dewetting of thin amorphous silicon (a-Si) layers. The grown layers are investigated with regard to their structural properties, their passivation quality for c-Si wafer substrates and their electrical properties in order to evaluate their suitability as a nanodot hetero-emitter. While by layer decomposition, no passivating nanodots could be formed, the dewetting process allows fabricating nanodot passivation layers at temperatures as low as 600°C. The series resistance through Ag/[Si-nanodots in SiO2]/c-Si/Al structures for dewetting is similar to nanostructured silicon rich SiOx films. Still, a nanodot hetero-emitter which exhibits both a satisfying passivation of the substrate and induces a high band bending by doping at the same time could not be fabricated yet.

Keywords: carrier concentration; electrical properties; HREM; nano; preparation; quantum dots; silicon; SiO2; solar cells; transmission electron microscopy
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