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V. G. Talalaev, B. V. Novikov, G. E. Cirlin, H. S. Leipner
Temperature quenching of spontaneous emission in tunnel-injection nanostructures.
Semicond. 49, 11 (2015), 1483-1492

The spontaneous-emission spectra in the near-IR range (0.8 1.3 mym) from inverted tunnel-injection nanostructures are measured. These structures contain an InAs quantum-dot layer and an InGaAs quantum-well layer, separated by GaAs barrier spacer whose thickness varies in the range 3-9 nm. The temperature dependence of this emission in the range 5-295 K is investigated, both for optical excitation (photoluminescence) and for current injection in p-n junction (electroluminescence). At room temperature, current pumping proves more effective for inverted tunnel-injection nanostructures with a thin barrier (<6 nm), when the apexes of the quantum dots connect with the quantum well by narrow InGaAs straps (nanobridges). In that case, the quenching of the electroluminescence by heating from 5 to 295 K is slight. The quenching factor S T of the integrated intensity I is S T = I 5/I 295 = 3. The temperature stability of the emission from inverted tunnel-injection nanostructures is discussed on the basis of extended Arrhenius analysis.

Keywords: temperature dependence; tunneling; nano; devices; quantum wells; quantum dots; photoluminescence; electroluminescence

DOI 10.1134/S1063782615110214
© Springer 2015

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