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N. Arutyunov, M. Elsayed, R. Krause-Rehberg, V. Emtsev, G. Oganesyan, V. Kozlovski
Thermally stable vacancy complexes in silicon n-FZ-Si(P) irradiated with 0.9 MeV electrons and 15 MeV protons.
16th International Conference on Gettering and Defect Engineering in Semiconductor Technology (2015),

We observed for the first time the thermally stable point positron-sensitive center of a vacancy type in n?FZ?Si(P) material irradiated at RT by ~ 0.9 MeV electrons. These radiation defects begin to disappear after the step of the isochronal annealing at T(anneal.) ?280 ? 300 ºC. The data of Hall effect measurements show plainly the involvement of the impurity atom (s) of phosphorus into the configuration of the thermally stable defects in both the proton- and electron irradiated samples. The data of the positron annihilation lifetime measurements suggest that the thermally stable defects in both the proton- and electron irradiated samples of n?FZ?Si(P) material trap positrons giving rise to the emission of the annihilation radiation characterized by long positron lifetime ? 276 ? 294 pico-seconds. Such values of the long positron lifetime are typical for a point defect comprising, at least, a vacancy (s). Possible microstructure of the thermally stable vacancy complexes containing, at least, one atom of phosphorus is suggested. In this connection some close configurations of the complex, VP, VPV , and VVP, where the open vacancy volume is tied to the impurity atom of phosphorus, are discussed.

Keywords: annealing; complex; Hall; impurities; irradiation; lifetime; positron annihilation; silicon; vacancies

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