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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
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Abstracts

H. S. Leipner, C. H?bner, T. E. M. Staab, M. Haugk, R. Krause-Rehberg
Positron annihilation at dislocations and related point defects in semiconductors
phys. stat. sol. (a) 171 (1999), 377-382

Dislocations act in semiconductors as combined positron traps, consisting of a shallow precursor state, which is related to regular parts of the dislocation line, and bound vacancy-like defects. The motion of dislocations during plastic deformation generates a high number of point defects. The clustering of vacancies to stable voids is regarded as a primary process of the jog dragging mechanism. Vacancy densities were quantitatively determined for different deformation conditions of GaAs.
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