Interdisziplinäres Zentrum für Materialwissenschaften
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      Nanotechnikum
Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Tel.: +49 345 55 28471
Telefax:+49 345 55 27390 email: info@cmat.uni-halle.de
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abstractM.Hanke, H.Raidt, R.K?hler, H.Wawra
Island chain formation during liquid phase epitaxy of SiGe on silicon
Appl. Phys.Lett. 83, 24 (2003), 4927-4929
 
abstractHartmut S. Leipner (Ed.)
Innovationsforum Nanostrukturierte Materialien
Martin-Luther-Universität Halle-Wittenberg (2003),
 
abstractH. Lei
Effect of point defects and dislocations on electrical and optical properties of III-V semiconductors
Dissertation (2003),
 
abstractD. Böschel, M. Janich, H. Roggendorf
Size distribution of colloidal silica in sodium silicate solutions investigated by dynamic light scattering and viscosity measurements
J. Colloid Interface Sci. 267, 2 (2003), 360-368
 
abstractH. S. Leipner, V. V. Mikhnovich, V. Bondarenko, Z. Wang. H. Gu, R. Krause-Rehberg, J.-L. Demenet, J. Rabier
Positron annihilation of defects in silicon deformed at different temperatures
Physica B 340-342 (2003), 617-621
 
abstractJ. Gebauer, M. Lausmann, F. Redmann, R. Krause-Rehberg, H. S. Leipner, E. R. Weber, P. Ebert
Determination of the Gibbs free energy of formation of Ga vacancies in GaAs by positron annihilation
Phys. Rev. B 67, 23 (2003), 235207
 
abstractD. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner
Pop-in effect as homogeneous nucleation of dislocations during nanoindentation
Virt. J. Nanoscale Sci. Technol. 7, 20 (2003),
 
abstractD. Lorenz, A. Zeckzer, U. Hilpert, P. Grau, H. Johansen, H. S. Leipner
Pop-in effect as homogeneous nucleation of dislocations during nanoindentation
Phys. Rev. B 67 (2003), 172101
 
abstractF. Redmann
Untersuchung von Siliziumkarbidkristallen mit Hilfe der Positronen-Annihilations-Spektroskopie
Dissertation (2003),
 
abstractZ. Wang, H. S. Leipner, R. Krause-Rehberg, V. Bodarenko, H. Gu
Defects properties in plastically deformed silicon studied by positron lifetime measurements
Microelectron. Eng. 66, 1-4 (2003), 358-366
 
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