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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
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H. S. Leipner, R. Krause-Rehberg
Positron annihilation studies of open-volume defects in silicon
Progress in silicon materials - From microelectronics to photovoltaics and optoelectronics. Ed. D. Yang. Beijing: Science Press (2004), pp. 202-214

After the description of the experimental technique, a review on recent positron lifetime experiments of silicon in the as-grown state and after treatment by electron irradiation or plastic deformation is given. The detection of vacancies and vacancy clusters and their thermal stability is discussed.

Keywords: positron annihilation; silicon
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