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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
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I. Ratschinski, H.S. Leipner, F. Heyroth, W. Fränzel, G. Leibiger, F. Habel
The effect of the indenter orientation on the formation of dislocations and cracks in (0001) GaN bulk crystals.
Mater. Sci. Forum 725 (2012), 67-70
(0001) GaN bulk crystals with a thickness of 3.4 mm and a density of in-grown dislocations of 3.5 10^6 cm^-2 have been deformed at room temperature using a Vickers indenter at two different sample orientations in relation to the indenter. Dislocations and cracks at the indentations were investigated by means of optical microscopy and scanning electron microscopy in secondary electron contrast and cathodoluminescence imaging. The arrangement of indentation-induced dislocations and cracks is described and the orientation effect is discussed.
Keywords: cathodoluminescence; cracks; deformation; dislocations; gallium nitride; indentation; orientation dependence
© Trans Tech Publications 2012
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