Interdisziplinäres Zentrum für Materialwissenschaften
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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de
[Papers] [Theses] [Reports] [Posters]
[with selected papers from user groups]   [IZM-Labs only]
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unfortunately no abstract available S. Kretschmer
Thermische Leitfähigkeit nanostrukturierter Dünnschichten
Diplomarbeit (2011),
 
unfortunately no abstract available Y. Yu
Positron annihilation lifetime spectroscopy: Studies of amorphous and crystalline molecular materials
Dissertation (2011),
 
abstractZ. P. Huang, N. Geyer, L. F. Li, M. Y. Li, P. Zhong
Metal-assisted electrochemical etching of silicon
Nanotechnol. 21, 46 (2010), 465301
 
abstractA. Szeghalmi, M. Helgert,R. Brunner, F. Heyroth,U. Gosele, M. Knez
Tunable Guided-Mode Resonance Grating Filter
Adv. Funct. Mater. 20, 13 (2010), 2053-2062
 
abstractK. Rothe, M. Stordeur, F. Heyroth, F. Syrowatka, H.S. Leipner
Electrical and structural real-time changes in thin thermoelectric (Bi0.15Sb0.85)(2)Te3 films by dynamic thermal treatment.
J. Electron. Mater. 39, 9 (2010), 1408-1412
 
abstractHans Roggendorf, Frank Syrowatka, Joerg Trempler
Corrosion of sodium silicate glasses in aqueous solutions - influence of pH.
Phys. Chem. Glasses 51, 6 (2010), 318-322
 
abstractMarkus Trutschel
Thermoelektische Eigenschaften von Si/Ge-Nanostrukturen.
Diplomarbeit (2010),
 
abstractClaudia Ehrhardt, Bodo Fuhrmann, Martin Diestelhorst, Stefan G. Ebbinghaus
BaTiO3-polymer composites.
Z. anorg. allg. Chem. 636, 11 (2010), 2114
 
abstractZhipeng Huang, Tomohiro Shimizu, Stephan Senz, Zhang Zhang, Nadine Geyer, Ulrich Gösele
Oxidation rate effect on the direction of metal-assisted chemical and electrochemical etching of silicon.
J. Phys. Chem. C 114 (2010), 10683-10690
 
abstractK. Rothe, M. Stordeur, H. S. Leipner
Power factor anisotropy of p-type and n-type conductive thermoelectric Bi-Sb-Te thin films.
J. Electron. Mater. 39, 9 (2010), 1395-1398
 
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