Interdisziplinäres Zentrum für Materialwissenschaften
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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de
[Papers] [Theses] [Reports] [Posters]
[with selected papers from user groups]   [IZM-Labs only]
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abstractMohamed Elsayed, Vladimir Bondarenko, Konrad Petters, Jörg Gebauer, Reinhard Krause-Rehberg
Vacancy generation during Cu diffusion in GaAs
J. Appl. Phys. 104 (2008), 103526
 
abstractC. Patzig, T. Karabacak, B. Fuhrmann, B. Rauschenbach
Glancing angle sputter deposited nanostructures on rotating substrates: Experiments and simulations
J. Appl. Phys. 104 (2008), 094318
 
abstractA. Rahm, M. Lorenz, T. Nobis, G. Zimmermann, M. Grundmann, B. Fuhrmann, F. Syrowatka
Pulsed laser deposition and characterization of ZnO nanowires with regular lateral arrangement
Appl. Phys. A 88, 1 (2007), 31-34
 
abstractH. S. Leipner, M. Kittler
Preface
phys. stat. sol. (c) 4, 8 (2007), VIII
 
abstractH. S. Leipner (Ed.)
Proceedings of the International conference on Extended defects in semiconductors (EDS 2006)
Weinheim: Wiley-VCH (2007),
 
abstractL. Schubert
Herstellung und Charakterisierung von Silizium Nanodrähten mittels Molekularstrahlepitaxie
Dissertation (2007),
 
abstractM. Schade, F. Heyroth, F. Syrowatka, H. S. Leipner, T. Boeck, M. Hanke
Investigation of the chemical composition profile of SiGe/Si(001) islands by analytical transmission electron microscopy
Appl. Phys. Lett. 90 (2007), 263101
 
abstractVladimir Sivakov, Frank Heyroth, Fritz Falk, Gudrun Andrä, Silke Christiansen
Silicon nanowire growth by electron beam evaporation: kinetic and energetic contributions to the growth morphology.
J. Cryst. Growth 300, 2 (2007), 288-293
 
abstractJ. Bauer, V. Gottschalch, H. Paetzelt, G. Wagner, B. Fuhrmann, H. S. Leipner
MOVPE growth and real structure of vertical-aligned GaAs nanowires
J. Cryst. Growth 298 (2007), 625-630
 
abstractJ. Bauer, F. Fleischer, O. Breitenstein, L. Schubert, P. Werner, U. Gösele, M. Zacharias
Electrical properties of nominally undoped silicon nanowires grown by molecular-beam epitaxy
Appl. Phys. Lett. 90 (2007), 012105
 
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