Interdisziplinäres Zentrum für Materialwissenschaften
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Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de
[Papers] [Theses] [Reports] [Posters]
[with selected papers from user groups]   [IZM-Labs only]
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abstractM. Hanke, C. Eisenschmidt, P. Werner, N. D. Zakharov, R. Syrowatka, F. Heyroth, P. Schäfer, O. Konovalov
Elastic strain relaxation in axial Si/Ge whisker heterostructures
Phys. Rev. B 75 (2007), 161303R
 
unfortunately no abstract available M. Schade, F. Heyroth, H. S. Leipner, M. Hanke
Combined HRXRD and EELS investigations of SiGe/Si(001) islands grown by means of liquid phase epitaxy.
Microsc. Microanal. 13 (2007), Suppl. 3
 
abstractS. Thraenert, E. M. Hassan, D. Enke, D. Fuerst, R. Krause-Rehberg
Verifying the RTE model: ortho-positronium lifetime measurement on controlled pore glasses.
phys. stat. sol. (c) 4, 10 (2007), 3819-3822
 
abstractM. Hanke, T. Boeck, A.-K. Gerlitzke, F. Syrowatka, F. Heyroth
Elastic strain relaxation in discontinuous wetting layers and its impact on lateral ordering of heteroepitaxial dots
Phys. Rev. B 74 (2006), 153304
 
abstractT. Höche, R. Böhme, J. W. Gerlach, B. Rauschenbach, F. Syrowatka
Nanoscale laser patterning of thin gold films
Phil. Mag. Lett. 86 (10) (2006), 661-667
 
abstractP. Werner, N. D. Zakhaarov, G. Gerth, L. Schubert, U. G?sele
On the formation of Si nanowires by molecular beam epitaxy
Intern. J. Mater. Res. 97, 7 (2006), 1008-1015
 
abstractV. V. Mikhnovich
Formation of defects at high temperature plastic deformation of gallium arsenide
Dissertation (2006),
 
abstractJ. Zhang, F. Paumier, T. H?che, F. Heyroth, F. Syrowatka, R. J. Gaboriaud, H. S. Leipner
Electron energy-loss spectroscopy investigations of Y2O3 films on Si (001) substrate
Thin Sol. Films 496 (2006), 266-272
 
abstractH. J. Fan, B. Fuhrmann, R. Scholz, F. Syrowatka, A. Dadgar, A. Krost, M. Zacharias
Well-ordered ZnO nanowire arrays on GaN substrate fabricated via nanosphere lithography
J. Cryst. Growth 287 (2006), 34-38
 
abstractN. D. Zakharov, P. Werner, G. Gerth, L. Schubert, L. Sokolov, U. G?sele
Growth phenomena of Si and Si/Ge nanowires on Si (111) by molecular beam epitaxy
J. Cryst. Growth 290 (2006), 6-10
 
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