Interdisziplinäres Zentrum für Materialwissenschaften
  Publications [search]   
Organization
Activities
Contact
Offers for students
Departments
Martin-Luther-University
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Phone: +49 345 55 28471
Telefax:+49 345 55 27390 e-mail: info@cmat.uni-halle.de
[Papers] [Theses] [Reports] [Posters]
[with selected papers from user groups]   [IZM-Labs only]
10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 140 | 150 | 160 | 170 | 180 | 190 | 200 | 210 | 220 | 230 | 240 | 250 | 260 | 270 | 280 | 290 | 300 | 310 | 320 |330 | 340 | 350 | 360 | 370 | 380 | 390 | 400 | 410 | 420 | 430 | 433 | All
abstractH. S. Leipner, Z. Wang. H. Gu, V. V. Mikhnovich, V. Bondarenko, R. Krause-Rehberg, J.-L. Demenet, J. Rabier
Defects in silicon plastically deformed at room temperature
phys. stat. sol. (a) 201, 9 (2004), 2021-2028
 
abstractHartmut S. Leipner, Hans-Reiner Höche (Ed.)
Nanostrukturierte Materialien im Blickpunkt der Wissenschaft.
Scientia Halensis Martin-Luther-Universität Halle-Wittenberg (2004),
 
abstractG. Seifert, M. Kaempfe, F. Syrowatka, C. Harnagea, D. Hesse ,H. Graener
Self-organized structure formation on the bottom of femtosecond laser ablation craters in glass
Applied Physics A Online First (2004),
 
abstractH. S. Leipner, R. Krause-Rehberg
Positron annihilation studies of open-volume defects in silicon
Progress in silicon materials - From microelectronics to photovoltaics and optoelectronics. Ed. D. Yang. Beijing: Science Press (2004), pp. 202-214
 
abstractM.Hanke, M.Schmidbauer, R.K?hler, F.Syrowatka, A.-K.Gerlitzke, T.Boeck
Equilibrium shape of SiGe Stranski-Krastanow islands on silicon grown by liquid phase epitaxy
Appl. Phys. Lett. 84 (2004), 5228-5230
 
abstractL. Schubert, P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, U. G?sele, T. Y. Tan
Silicon nanowhiskers grown on <111>Si substrates by molecular-beam epitaxy
Appl. Phys. Lett. 84, 24 (2004), 4968-4970
 
abstractH. Lei, H. S. Leipner, V. Bondarenko, J. Schreiber
Identification of the 0.95 eV luminescence band in n-type GaAs:Si
J. Phys. Cond. Mat. 16 (2004), S279-285
 
abstractM. R?ssel, H.-R. H?che, H. S. Leipner, D. V?ltzke, H.-P. Abicht, O. Hollricher, J. M?ller, S. Gablenz
Raman microscopic investigations of BaTiO3 precursors with core-shell structure
Analyt. Bioanalyt. Chem. 380 (2004), 157-162
 
unfortunately no abstract available V. S. Stepanyuk, P. Bruno, A. L. Klavsyuk, A. N. Baranov, W. Hergert, A. M. Saletsky, I. Mertig
Structure and quantum effects in atomic-sized contacts
Phys. Rev. B 69 (2004), 033302
 
abstractR. Krause-Rehberg, N. van der Walt, L. B?ttner, F. B?rner
A 22-Na positron source for use in UHV
Nucl. Instr. Meth. Phys. Res. B 221 (2004), 165-167
 
10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 | 110 | 120 | 130 | 140 | 150 | 160 | 170 | 180 | 190 | 200 | 210 | 220 | 230 | 240 | 250 | 260 | 270 | 280 | 290 | 300 | 310 | 320 |330 | 340 | 350 | 360 | 370 | 380 | 390 | 400 | 410 | 420 | 430 | 433 | All


Impressum Copyright © Center of Materials Science, Halle, Germany. All rights reserved.