Interdisziplinäres Zentrum für Materialwissenschaften
  Publikationen [suche]   
Organisation
Aktivitäten
Kontakt
Angebote für Studenten
Bereiche im
      Nanotechnikum
Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4,
D-06120 Halle, Germany
Tel.: +49 345 55 28471
Telefax:+49 345 55 27390 email: info@cmat.uni-halle.de
[Veröffentlichungen] [Graduierungsarbeiten] [Berichte] [Poster]
Abstracts

M. Schade, T. Mchedlidze, M. Kittler, H. S. Leipner
Light induced crystallization of an amorphous silicon film embedded between silicon oxide layers.
phys. stat. sol. (b) 251(2) (2014), 439-445

An amorphous Si (a-Si) film, 60 nm thick, embedded between SiO2 layers and deposited on quartz substrate was crystallized in the regime of light-induced solid-phase crystallization (LISPC). The high quality of the film after LISPC was proved by high-resolution transmission electron microscopy (HRTEM), by Raman spectroscopy (RS) measurements, and by electron energy loss spectroscopy (EELS). The crystallized film consisted of fully crystalline grains with lateral sizes of 200?600nm. Only a few stacking faults and/or dislocations were detected inside these grains. Besides the large grains, regions with fully crystalline material containing a higher density of lattice defects were also observed. An intermixing of phases, i.e., SiO2 or a-Si clusters inside the crystallized Si film and/or Si-clysters inside the SiO2 layers, was not detected.

Keywords: amorphous; dislocations; EELS; growth; HREM; illumination; Raman; silicon; SiO2; stacking faults; transmission electron microscopy
© Wiley-VCH 2013

Impressum Copyright © Center of Materials Science, Halle, Germany. All rights reserved.