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Interdisziplinäres Zentrum für Materialwissenschaften
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Abstracts

Vadim G. Talalaev, George E. Cirlin, Boris V. Novikov, Bodo Fuhrmann, Peter Werner, Jens W. Tomm
Ex post manipulation of barriers in InGaAs tunnel injection devices.
J. Appl. Phys. 106, 1 (2015), 013104

Ex post manipulation of 1.1 emitting InGaAs/GaAs-based quantum dot/quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.

Keywords: degradation; devices; electroluminescence; photoluminescence; quantum dots

DOI 10.1063/1.4905467
© AIP 2015


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