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Bereiche im
Nanotechnikum |
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Martin-Luther-Universität
Interdisziplinäres Zentrum für Materialwissenschaften
Nanotechnikum Weinberg
Heinrich-Damerow-Str. 4, D-06120 Halle, Germany
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 | R. Krause-Rehberg, H. S. Leipner
Positron annihilation in semiconductors
Berlin: Springer-Verlag ISBN 3-540-64371-0 (1999), Springer series in solid-state sciences 127 |
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E. Langer, S. D?britz, A. R?der, W. Hauffe
Studies of polycrystalline materials by Pseudo Kossel technique
Fresenius J. Anal. Chem. 365 (1999), 212-216 |
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| N. Engler, H. S. Leipner, R. F. Scholz, P. Werner, F. Syrowatka, J. Schreiber, U. G?sele
Investigations of extended defects after sulfur diffusion in GaAs
Sol. State Phen. 69-70 (1999), 443-448 |
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| F. Heyroth, H.-R. H?che and C. Eisenschmidt
Contrast in X-ray section topographs of perfect silicon crystals using the Laue-Laue three-beam case of diffraction
J. Appl. Cryst. 32 (1999), 489-496 |
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| F. Heyroth, H.-R. H?che and C. Eisenschmidt
Imaging of the energy flow in the three-beam case of X-ray diffraction
J. Phys. D: Appl. Phys. 32 (1999), A133-138 |
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| M. Kolbe, C. Eisenschmidt, H.-R. H?che
Einfluß der Defektstruktur von Kristallen auf den Polarisationszustand der gebeugten Strahlung
HASYLAB? Annual Report 1998, Pt. I (1999), 729-730 |
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| H. S. Leipner, C. Hübner, T. E. M. Staab, M. Haugk, R. Krause-Rehberg
Positron annihilation at dislocations and related point defects in semiconductors
phys. stat. sol. (a) 171 (1999), 377-382 |
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| J. Schreiber, L. H?ring, H. Uniewski, S. Hildebrandt, H. S. Leipner
Recognition and distribution of A(g) and B(g) dislocations in indentation zones on {111} and {110} surfaces of CdTe
phys. stat. sol. (a) 171 (1999), 89-97 |
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| F. Heyroth, C. Eisenschmidt, H.-R. H?che
X-ray topography of perfect crystals using the Laue-Laue three-beam case of diffraction
Cryst. Res. Technol. 33 (1998), 547-554 |
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R. Krause-Rehberg, H. S. Leipner, A. Polity, F. Rudolf, R. Hammer, M. Jurisch
Mechanical damage in GaAs wafers introduced by a diamond saw: A study by means of positron annihilation and electron microscopy
phys. stat. sol. (a) 158,2 (1998), 377-383 |
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